? semiconductor components industries, llc, 2015 august, 2016 ? rev. 0 publication order number: NSR2030DMX/d NSR2030DMX 2a, 30v schottky half bridge these half bridge schottky barrier diodes are designed for the rectification of the high speed signal of wireless charging. the NSR2030DMX has a very low forward voltage that will reduce conduction loss. it is housed in a xdfn 2.0 x 1.35 x 0.4 mm package that is ideal for space constrained wireless applications. features ? extremely fast switching speed ? low forward voltage ? 0.54 v (typ) @ i f = 2 a ? these devices are pb?free, halogen free and are rohs compliant typical applications ? low voltage half bridge rectification & wireless charging maximum ratings (t j = 150 c unless otherwise noted) (note 1) rating symbol value unit reverse voltage v r 30 v forward current (dc) i f 2.0 a forward current surge peak (60 hz, 1 cycle) i fsm 8.0 a non?repetitive peak forward current (square wave, t j = 25 c prior to surge) t = 1 s t = 1 ms t = 1 s i fsm 55 10 5.0 a stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. all specifications pertain to a single diode. thermal characteristics characteristic symbol max unit total device dissipation fr-5 board t a = 25 c derate above 25 c p d (note 2) 0.634 5.07 w mw/ c thermal resistance junction to ambient r ja (note 2) 197.2 c/w junction temperature t j +150 c storage temperature range t stg ?55 to +150 c 2. single layer jedec jesd51.3 fr?4 @ 100 mm 2 , 2 oz. copper trace, still air. marking diagram device package shipping ? ordering information xdfn4 2.0x1.35 case 711bd www. onsemi.com m ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. NSR2030DMXtag xdfn4 (pb?free) 3000 / tape & reel 3d = specific device code m = date code = pb?free package pin connections device schematic 3d m
NSR2030DMX www. onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) (note 3) characteristic symbol min typ max unit reverse breakdown voltage (i r = 1.0 ma) v (br) 30 ? ? v reverse leakage (v r = 30 v) i r ? 5.0 20 a forward voltage (i f = 0.5 a) v f ? 0.41 0.45 v forward voltage (i f = 1.0 a) v f ? 0.46 0.55 v forward voltage (i f = 2.0 a) v f ? 0.54 0.65 v reverse recovery time (i f = i r = 10 ma, i r(rec) = 1.0 ma) t rr ? 25 ? ns total capacitance (v r = 1.0 v, f = 1.0 mhz) c t ? 76 ? pf 3. all specifications pertain to a single diode. notes: 1. a 2.0 k variable resistor adjusted for a forward current (i f ) of 10 ma. notes: 2. input pulse is adjusted so i r(peak) is equal to 10 ma. notes: 3. t p ? t rr +10 v 2.0 k 820 0.1 f d.u.t. v r 100 h 0.1 f 50 output pulse generator 50 input sampling oscilloscope t r t p t 10% 90% i f i r t rr t i r(rec) = 1.0 ma output pulse (i f = i r = 10 ma; measured at i r(rec) = 1.0 ma) i f input signal figure 1. recovery time equivalent test circuit
NSR2030DMX www. onsemi.com 3 figure 1. forward voltage figure 2. reverse leakage figure 3. capacitance figure 4. non?repetitive peak forward current, max values 0.001 0.01 0.1 10 0.0 0.1 0.2 0.3 0.4 0.5 0.6 1.0e?09 1.0e?07 1.0e?05 1.0e?01 5 10152025 i r , reverse current ( a) 125 c 85 c 150 c ?55 c 25 c 150 c 85 c 25 c 125 c 0 20 40 60 80 100 120 140 0 5 10 15 20 30 1.0e?03 v r , reverse voltage (v) i f , forward current (a) 25 30 c t , capacitance (pf) 25 30 v r , reverse voltage (v) v f , forward voltage (v) 1.0e?11 1.0e?08 1.0e?06 1.0e?02 1.0e?04 ?55 c 1 t a = 25 c 160 based on square wave currents t j = 25 c prior to surge 0 10 20 30 40 50 60 0.001 0.01 0.1 1 10 100 1000 i fsm , forward surge max current (a) t p , pulse on time (ms) 1.0e?10 0.1 0.2 0.02 d = 0.5 0.05 0.01 single pulse r(t) ( c/w) pulse time (s) figure 5. thermal response 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 0.1 1 10 1000 100 based on square wave currents t j = 25 c prior to surge
NSR2030DMX www. onsemi.com 4 package dimensions xdfn4 2.0x1.35, 0.525p case 711bd issue o ??? ??? dim min max millimeters a a1 0.00 0.05 b 0.225 0.325 d 2.00 bsc e 1.35 bsc e1 0.475 bsc notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. dimensions b applies to plated terminal and is measured between 0.15 and 0.25 mm from the terminal tip. 4. coplanarity applies to the pads as well as the terminals. pin one d e b a c 0.10 c 0.10 a c a1 seating plane c 0.08 c 0.10 0.34 0.44 g 1.12 1.23 reference top view side view mounting footprint recommended l 0.15 0.25 6x note 4 d2 0.70 0.80 e2 0.70 0.80 e 0.525 bsc b l 1 e1 4x 4x note 3 bottom view b a c c m 0.10 m 0.05 e 2x e2 2x d2 2x g g/2 0.475 0.85 1.45 dimensions: millimeters 2x 1 2x package outline 0.525 0.275 4x 0.385 4x 1.85 0.935 2x p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 NSR2030DMX/d literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does o n semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semiconductor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typic als? must be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the right s of others. on semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semicondu ctor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distrib utors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner.
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